4 Inch Gan-on-si Epi Wafer Manufacturer For Rf Application
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4 inch GaN-on-Si Epi Wafer Manufacturer For RF Application
As the leading GaN Epi Wafer Manufacturer in China, HMT provide high quality 4 inch GaN on Si Epitaxial Wafer for D-mode,E-mode and RF HEMT application. Meanwhile,we also provdie GaN on SiC Epi Wafer and GaN on Sapphire Epi Wafer both 4 inch and 6 inch.
Business Nature
Manufacturer
No. Employees
11 - 50 People
Year Established
2009
Country/Region
Suzhou, China
Main Products
Sic Wafer, Sic Substrate, Gan Substrate, Sic Ingots...
Legal Status
Third Party
Payment Terms
Bank wire (T/T)
Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of SiC Ingots, Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer and Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
