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Gan Substrate Wafer Supplier Offer 4 Inch Gan On Sapphire Wafer

Selling Price: USD 100 / Piece
Minimum Order Quantity:  25 Piece
Shipment Delivery Time:  15days
Shipment Port:  shanghai
Currency Options:  USD
Language Support:   English, Chinese
Certification:  Inquire
Production Capacity: High
Primary Business:  Manufacturer
Packaging:  Standard
Preferred Payment Method:
GaN Substrate Wafer Supplier Offer 4 Inch GaN On Sapphire Wafer Details

GaN Substrate Wafer supplier offer 4 inch GaN on Sapphire wafer

HMT company offer 2 inch and 4 inch GaN on Sapphire with un-doped N type and Si-doped N type.

Homray Material Technologys advanced proprietary technology enables cost effective starting substrates for GaN material research and development or device production. This technology utilizes novel techniques which mitigate obstacles that have hindered high quality material growth on readily available substrates that are commonly used in the semiconductor industry.

About Homray Material Technology
Business Type: Manufacturer
Country / Region: Jiangsu, China
Main Products: Sic Wafer, Sic Substrate, Gan Substrate, Sic Ingots...
Total Annual Revenue: Not Provided
Year of Establishment: 2009
Certificates: ISO/TS16949
Main Markets: Australia 11%, Canada 13%, Germany 18%, India 25%, United Kingdom 30%,
Business Nature

Manufacturer

No. Employees

11 - 50 People

Year Established

2009

Country/Region

Suzhou, China

Main Products

Sic Wafer, Sic Substrate, Gan Substrate, Sic Ingots...

Legal Status

Third Party

Payment Terms

Bank wire (T/T)

About Homray Material Technology

Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of SiC Ingots, Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer and Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.

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To: Gan Substrate Wafer Supplier Offer 4 Inch Gan On Sapphire Wafer
From China 1st Year
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Business Type:
Manufacturer
Rating:
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Response:
90%
Transactions:
Not Available
Suli Road , Jiangsu , Suzhou , China

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