Monolayer Graphene On Sio2/si Substrate, Size: 2"
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Technical Properties of Graphene Film: |
|
Transparency | > 95 % |
Coverage: | > 93% |
Thickness (theoretical) | 0.340 nm |
Sheet Resistance: | 500-530 Ohms/sq |
Grain size | 6-10 μm |
Technical Properties of SiO2/Si Substrate: |
|
Size (inch) | 2'' |
Dry Oxide Thickness | 300 nm |
Type | Phosphor doped/N type |
Orientation | <100> |
Resistivity | 0.001 - 0.01 |
Thickness | 525 +/- 20 μm |
Front surface | One Side Polished |
Applications:
Graphene research; Supercapacitors; Catalyst; Solar energy; Graphene optoelectronics, plasmonics and nanophotonics;
Graphene semiconductor chips; Conductive graphene film; Graphene computer memory; Biomaterials and Bioelectronics
SEM Image of Monolayer Graphene
Raman Image Of Monolayer Graphene
METHOD OF PREPARATION GRAPHENE ON SI/SIO2 SUBSTRATE WAS PREPARED BY THE FOLLOWING STEPS: |
1) Singlelayer graphene grown on copper foil |
2) Deposit PMMA and curing process |
3) Remove Cu by etching process |
4) Wash PMMA/Graphene in DI water |
5) Redeposit PMMA/Graphene onto Si substrate and curing process |
6) Remove PMMA with aceton |
Business Nature
Manufacturer
Country/Region
Istanbul, Turkey
Main Products
Nanographene...
Payment Terms
Bank wire (T/T)
Nanographenex Nanotechnology Ltd